Differences in polarization-versus-electric-field and strain-versus-electric-field behavior between the hot-pressed and annealed materials have been discussed in terms of differences in domain mobility. The polycrystal annealing texture can not be interpreted exclusively in terms of 35111 rotations. noticeable during the same deformation of a single crystal and polycrystal. (A) Grain size variations as a function of annealing temperature for three samples with initial average grain sizes of 50 nm, 25 nm, and 10 nm, respectively. The invention relates to a process for manufacturing a single crystal comprising a rare-earth halide, having improved machining or cleavage behaviour. The transition on annealing has been explained in terms of chemical homogenization to a near-morphotropic phase-boundary composition that is intrinsically weak normal-ferroelectric. The differences in the microstructure and texture of two Ni single crystals.

The as-hot-pressed properties have been explained as being the integrated response of many discrete ferroelectric responses as dictated for each of these regions by the local chemistry. The as-hot-pressed microstructure was chemically heterogeneous, characterized by submicrometer-sized regions of varying magnesium, niobium, and titanium content that likely originated from chemical heterogeneities that were present in the as-prepared PMN-PT powder. Annealing resulted in a transition to weak normal-ferroelectric behavior, a shift in the dielectric maximum temperature from 190☌ to 169☌, and a dramatic increase of to a maximum value of 41 720 for the longer anneal. The as-hot-pressed material exhibited relaxor–ferroelectric-like behavior, with a relatively low dielectric constant maximum measured at 1 kHz of 8160. Al alloy / Ohno continuous casting / columnar-grained polycrystal. (BF) Coarsening of the polycrystal colored according to the color wheel in Fig. Compared with the conventional polycrystalline sample, the single-crystal and. (A, Inset) Stage I becomes shorter as m increases. Different proposals for calculating polycrystal resistivities from single-crystal values are applied to yttrium metal. (A) The mean grain diameter grows in three stages. Dielectric and piezoelectric properties of the as-hot-pressed and annealed samples were measured and correlated with microstructure. Polycrystal annealing under oscillatory shear with m 0.20. Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene13, hexagonal boron nitride (hBN)46 and transition metal dichalcogenides7,8 have been grown. Fully dense compacts were formed by hot-pressing the powder at 950☌, and then the compacts were annealed at 1150☌ for 5 and 10 h, respectively. Finally, a CZTS thin-film solar cell is fabricated through laser annealing, with an efficiency of 0.003% under AM1.5 G (100 mW cm -2) at 25 ☌.PbO3 (PMN–35PT) powder was prepared using the columbite precursor method. This suggests that the defect or secondary phase reduces, and the precursor changes to CZTS polycrystal by laser annealing. X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and UV-vis spectroscopy analysis reveals that the poly crystallization of CZTS precursor is promoted by increasing the output power or scan time per unit length at the laser irradiation.

In this work, a novel CZTS formation process, which consists of Cu-Zn-Sn-S containing CZTS precursor formation followed by 445 nm laser irradiation in atmosphere, is investigated. CZTS is generally formed by precursor formation followed by heat treatment at 400 ☌-600 ☌. Cu 2ZnSnS 4 (CZTS) is a promising material for solar cells because all its constituents are earth-abundant elements, and its light absorption coefficient is ~100 times higher than that of Si.

Polycrystal annealing singlecrystal